STB19NF20 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB19NF20 - STF9NF20 - STP19NF20
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1mA, V_GS= 0
200
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125°C
1
µA
10 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20V
±100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
2
3
4
V
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 7.5A
0.15 0.16 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{=8V, I}_D ^{= 7.5A}
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25V, f=1 MHz,
V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=160V, I_D = 15A
V_GS =10V
(see Figure 16)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
12
S
800
pF
165
pF
26
pF
24
nC
4.4
nC
11.6
nC
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