STB185N10F3 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 100 V, 4.0 mΩ, 120 A, D2PAK, TO-220 STripFET™ Power MOSFET

STB185N10F3 - STP185N10F3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
V_SD(2) Forward on voltage
I_SD=120 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=120 A,
di/dt = 100 A/µs,
V_DD=30 V, Tj=150°C
(see Figure 4)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
120 A
480 A
1.5
V
TBD
ns
TBD
µC
TBD
A
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