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| STB185N10F3 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 100 V, 4.0 mΩ, 120 A, D2PAK, TO-220 STripFET™ Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STB185N10F3 - STP185N10F3
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
100
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS= max rating,
VDS= max rating,@125°C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
2
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 60 A
D²PAK
TO-220
Typ.
Max.
10
100
±200
4
4.5
4.8
Unit
V
µA
µA
nA
V
mâ¦
mâ¦
Table 5.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6.
Symbol
Dynamic
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 80 V, ID = 120 A,
VGS = 10 V
(see Figure 3)
Min. Typ. Max. Unit
TBD
pF
TBD
pF
TBD
pF
100 TBD nC
TBD
nC
TBD
nC
Test conditions
VDD = 50 V, ID = 60 A
RG = 4.7 ⦠VGS = 10 V
(see Figure 2, Figure 7)
Min. Typ. Max. Unit
TBD
ns
TBD
ns
TBD
ns
TBD
ns
4/12
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