STB185N10F3 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 100 V, 4.0 mΩ, 120 A, D2PAK, TO-220 STripFET™ Power MOSFET

Features
STB185N10F3
STP185N10F3
N-channel 100 V, 4.0 mΩ, 120 A, D²PAK, TO-220
STripFET™ Power MOSFET
Preliminary Data
Type
STB185N10F3
STP185N10F3
V_DSS
100 V
100 V
1. Value limited by wire bonding
■ Ultra low on-resistance
■ 100% avalanche tested
R_DS(on)
4.5 mΩ
4.8 mΩ
I_D
120 A⁽¹⁾
120 A⁽¹⁾
Application
■ Switching application
– Automotive
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size”
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB185N10F3
STP185N10F3
Marking
185N10F3
185N10F3
Package
D²PAK
TO-220
Packaging
Tape and reel
Tube
August 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12