STB170NF04 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 40 V, 4.4 m typ., 80 A STripFET II Power MOSFET in a D2PAK package

STB170NF04
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD= 80 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 80 A, di/dt = 100 A/µs,
V_DD=20 V, Tj=150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
-
1.5 V
70
ns
- 180
nC
4
A
Doc ID 15591 Rev 2
5/15