STB170NF04 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 40 V, 4.4 m typ., 80 A STripFET II Power MOSFET in a D2PAK package

STB170NF04
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate-source voltage
I_D ⁽¹⁾
Drain current (continuous) at T_C = 25 °C
I_D ⁽¹⁾
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
dv/dt ^{(3) Peak diode recovery voltage slope}
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg
Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 80 A, di/dt ≤ 300 A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ T_JMAX
4. Starting Tj = 25 °C, I_D = 40 A, V_DD = 30 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb^{(1) Thermal resistance junction-pcb max}
1. When mounted on 1 inch² FR4 2 oz Cu
Electrical ratings
Value
40
± 20
80
80
320
300
2
8
1.5
Unit
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
Value
0.5
35
Unit
°C/W
°C/W
Doc ID 15591 Rev 2
3/15