STB170NF04 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 40 V, 4.4 m typ., 80 A STripFET II Power MOSFET in a D2PAK package

Electrical characteristics
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified).
Table 4.
Symbol
On/off
Parameter
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on-
resistance
I_D = 250 µA, V_GS= 0
V_DS = 40 V,
V_DS = 40 V, Tc=125 °C
V_GS = ±20 V
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 40 A
STB170NF04
Min. Typ. Max. Unit
40
V
10 µA
100 µA
±100 nA
2
4.4
4
V
5 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{=15 V, I}_D ^{= 40 A}
-
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25 V, f=1 MHz, V_GS=0 -
Q_{g Total gate charge}
V_DD=20 V, I_D = 80 A
Q_gs Gate-source charge
V_GS =10 V
-
Q_gd Gate-drain charge
(see Figure 14)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Typ.
90
5345
1400
430
117
27
41
Max. Unit
S
9000 pF
pF
pF
170 nC
nC
nC
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
Test conditions
V_DD= 20 V, I_D= 40 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 13)
V_DD= 20 V, I_D= 40 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 13)
Min. Typ. Max. Unit
26
ns
-
-
57
ns
100
ns
-
-
66
ns
4/15
Doc ID 15591 Rev 2