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| STB160N75F3 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSFET | |||
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STB160N75F3 - STP160N75F3 - STW160N75F3
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=35 V, ID= 60A,
RG=4.7â¦, VGS=10V,
(see Figure 4)
Min. Typ. Max. Unit
Tbd
ns
Tbd
ns
Tbd
ns
Tbd
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A, VGS=0
ISD=120A, di/dt =
100A/µs, VDD=30 V,
Tj=150°C
(see Figure 3)
1. Pulse with limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
120 A
480 A
1.5 V
75
ns
195
nC
5
A
5/13
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