STB160N75F3 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSFET

Electrical characteristics
STB160N75F3 - STP160N75F3 - STW160N75F3
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS= 0
75
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating,@125°C
I_GSS
Gate body leakage
current
(V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250µA
2
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 60A
D²PAK
V
10 µA
100 µA
±200 nA
4V
3.5 4.5 mΩ
3.2 4.2 mΩ
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs(1)
Forward
transconductance
V_DS =15V, I_D= 4.5A
I_D = 10A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25V, f=1 MHz, V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=44V, I_D = 60A
V_GS =10V
(see Figure 2)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ Max Unit
Tbd
S
7000
pF
1100
pF
32
pF
110 Tbd nC
Tbd
nC
Tbd
nC
4/13