STB160N75F3 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSFET

STB160N75F3 - STP160N75F3 - STW160N75F3
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D ⁽¹⁾
I_D ⁽¹⁾
I_DM(2)
P_TOT ⁽³⁾
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
dv/dt Peak diode recovery voltage slope
E_AS
Single pulse avalanche energy
T_j
Operating junction temperature
T_stg
Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. Rated according to Rthj-case
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
75
± 20
120
96
480
315
2.1
Tbd
Tbd
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.48
62.5
300
Unit
°C/W
°C/W
°C
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