STB14NM65N Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

STB/F/I/P/W14NM65N
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD =325 V, I_D = 6 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 18)
Min Typ Max Unit
11
ns
13
ns
55
ns
20
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 12 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 12 A, di/dt = 100 A/µs
V_DD = 100 V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 12 A, di/dt = 100 A/µs
V_DD = 100 V, T_J = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
12 A
48 A
1.3 V
390
ns
5
µC
25
A
530
ns
7
µC
25
A
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