STB14NM65N Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

STB/F/I/P/W14NM65N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, TO-247
D²PAK, I²PAK
TO-220FP
Unit
V_DS Drain-source voltage (V_GS=0)
650
V_GS Gate-source voltage
± 25
I_D Drain current (continuous) at T_C = 25 °C
12
12⁽¹⁾
I_D Drain current (continuous) at T_C = 100 °C
7.6
7.6 ⁽¹⁾
I_DM ⁽²⁾ Drain current (pulsed)
48
48⁽¹⁾
P_TOT Total dissipation at T_C = 25 °C
125
30
dv/dt ^{(3) Peak diode recovery voltage slope}
15
V_ISO
T_stg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T_C=25 °C)
Storage temperature
--
2500
-55 to 150
T_J Max. operating junction temperature
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 12 A, di/dt ≤ 400 A/µs, V_DD =80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Value
TO-220 I²PAK D²PAK TO-247 TO-220FP
V
V
A
A
A
W
V/ns
V
°C
°C
Unit
R_thj-case
Thermal resistance
junction-case max
R_thj-amb
Thermal resistance
junction-amb max
R_thj-pcb
Thermal resistance
junction-pcb max
Maximum lead
T_l temperature for soldering
purposes
1
62.5
--
50
--
--
30
--
300
4.2
°C/W
62.5
°C/W
--
°C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
I_AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_J max)
Single pulse avalanche energy
E_{AS (starting TJ=25 °C, ID=IAS, VDD= 50 V)}
3
A
300
mJ
3/18