STB14NM65N Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

STB14NM65N, STF14NM65N
STI14NM65N,STP14NM65N,STW14NM65N
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, D²PAK, I²PAK, TO-247
Features
Type
STI14NM65N
STB14NM65N
STF14NM65N
STP14NM65N
STW14NM65N
V_DSS
(@T_Jmax)
710 V
710 V
710 V
710 V
710 V
R_DS(on)
max
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
I_D
12 A
12 A
12 A⁽¹⁾
12 A
12 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
3
2
1
TO-220
3
2
1
TO-247
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STI14NM65N
STB14NM65N
STF14NM65N
STP14NM65N
STW14NM65N
Marking
14NM65N
14NM65N
14NM65N
14NM65N
14NM65N
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tube
Tape and reel
Tube
Tube
Tube
October 2008
Rev 2
1/18
www.st.com
18