STB13NM50N_08 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 500 V - 0.250 Ω - 12 A MDmesh™ II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK

STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD=250 V, I_D=6 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 18)
Min. Typ. Max. Unit
30
ns
15
ns
40
ns
10
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD(2)
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=12 A, V_GS=0
I_SD=12 A, V_DD=100 V
di/dt = 100 A/µs
(see Figure 20)
I_SD=12 A,V_DD=100 V
di/dt=100 A/µs,Tj=125 °C
(see Figure 20)
12 A
48 A
1.3 V
300
ns
3
µC
22
A
370
ns
4
µC
22
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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