STB13NM50N_08 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 500 V - 0.250 Ω - 12 A MDmesh™ II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK

STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220/TO-247
D²PAK/I²PAK
Unit
TO-220FP
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T_C=25 °C)
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤12 A, di/dt ≤400 A/µs, V_DD = 80% V_(BR)DSS
Table 3. Thermal data
500
± 25
12
6
48
100
15
12 ⁽¹⁾
6 ⁽¹⁾
48 ⁽¹⁾
25
--
2500
-55 to 150
150
V
V
A
A
A
W
V/ns
V
°C
°C
Symbol
Parameter
Value
Unit
TO-220 I²PAK D²PAK TO-247 TO-220FP
R_thj-case
R_thj-amb
R_thj-pcb
T_l
Thermal resistance junction-
case max
Thermal resistance junction-
amb max
Thermal resistance junction-
pcb max
Maximum lead temperature for
soldering purposes
1.25
62.5
--
50
--
--
30
--
300
5
°C/W
62.5 °C/W
--
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Max value
Unit
I_AS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
3.5
A
Single pulse avalanche energy
E_AS
(starting Tj=25 °C, I_D=I_AS, V_DD= 50 V)
200
mJ
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