STB13NM50N_08 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 500 V - 0.250 Ω - 12 A MDmesh™ II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK

Electrical characteristics
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
2
Electrical characteristics
(T_CASE= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
dv/dt^{(1) Drain-source voltage slope}
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1 mA, V_GS= 0
V_DD=400 V, I_D=12 A,
V_GS=10 V
V_DS = Max rating,
V_DS = Max rating,Tc=125°C
V_GS = ±20 V
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 6 A
1. Characteristics value at turn off on inductive load
Min. Typ. Max. Unit
500
V
30
V/ns
1 µA
100 µA
100 nA
2
3
4
V
0.25 0.32 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs(1) Forward transconductance ^V_DS ^{=15 V, I}_D^{= 6 A}
8
S
C_iss ^{Input capacitance}
960
pF
C_oss ^{Output capacitance}
V_DS =50 V, f=1 MHz, V_GS=0
50
pF
Reverse transfer
C_{rss capacitance}
5
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS=0, V_DS =0 to 480 V
110
pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
5
Ω
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=400 V, I_D = 12 A
V_GS =10 V
(see Figure 19)
30
nC
5
nC
15
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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