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| STB12NK80Z_07 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH™ Power MOSFET | |||
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STB12NK80Z - STP12NK80Z - STW12NK80Z
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=10.5A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=10.5A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
10.5 A
42 A
1.6 V
635
ns
5.9
µC
18.5
A
Table 7. Gate-source zener diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
BVGSO(1)
Gate-Source breakdown
voltage
Igs=±1mA
(Open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the deviceâs
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the deviceâs integrity. These integrated Zener diodes thus avoid the
usage of external components.
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