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| STB12NK80Z_07 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH™ Power MOSFET | |||
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Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Peak diode recovery
voltage slope
VDS =Max rating,
VDS =Max rating,
Tc=125°C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 20V
Gate threshold voltage
VDS= VGS, ID = 100µA
Static drain-source on
resistance
VGS= 10V, ID = 5.25A
Min. Typ. Max. Unit
800
V
1
µA
50 µA
±10 µA
3 3.75 4.5 V
0.65 0.75 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 5.25A
12
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2620
250
53
pF
pF
pF
Cosseq(2)
Equivalent output
capacitance
VGS=0, VDS =0V to 640V
100
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=640V, ID = 10.5A
VGS =10V
(see Figure 18)
87
nC
14
nC
44
nC
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=400 V, ID= 5.25A,
RG=4.7â¦, VGS=10V
(see Figure 19)
30
ns
18
ns
70
ns
20
ns
tr(Voff)
tf
tc
Off voltage rise time
Fall time
Cross-over time
VDD=640 V, ID= 10.5A,
RG=4.7â¦, VGS=10V
(see Figure 19)
16
ns
15
ns
28
ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
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