STB12NK80Z_07 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH™ Power MOSFET

STB12NK80Z - STP12NK80Z - STW12NK80Z
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_TOT
dv/dt⁽²⁾
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20KΩ)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C=100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating Factor
Peak diode recovery voltage slope
T_J
Operating junction temperature
T_stg
Storage temperature
1. Pulse width limited by safe operating area
2. I_SD ≤10.5 A, di/dt ≤200A/µs, V_DD ≤V_(BR)DSS, T_j ≤T_JMAX
Table 2. Thermal data
Symbol
Parameter
R_thj-case
R_thj-a
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AS
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_{AS (starting Tj=25°C, Id=Iar, Vdd=50V)}
Value
800
800
± 30
10.5
6.6
42
190
1.51
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
°C
Value
TO-220/
D²PAK
TO-247
Unit
0.66
62.5
50
300
°C/W
°C/W
°C
Value
Unit
10.5
A
400
mJ
3/16