SCT10N120 Datasheet, PDF (5/14 Pages) STMicroelectronics – High voltage DC-DC converters

SCT10N120
Symbol
td(on)
tf
td(off)
tr
Parameter
Turn-on delay time
Fall time
Turn-off delay time
Rise time
Table 7: Switching times
Test conditions
VDD = 800 V, ID = 6 A,
RG = 10 Ω,
VGS = -5 to 20 V
Electrical characteristics
Min. Typ. Max. Unit
-
7
-
ns
-
17
-
ns
-
14
-
ns
-
12
-
ns
Symbol
VSD
trr
Qrr
IRRM
Table 8: Reverse SiC diode characteristics
Parameter
Test conditions
Min
Diode forward voltage
IF = 6 A, VGS = 0 V
-
Reverse recovery time
ISD = 6 A,
-
Reverse recovery charge ^{di/dt = 2000 A/µs}
-
Reverse recovery current ^{VDD = 800 V, TJ=150 °C}
-
Typ. Max Unit
4.3 -
V
16
-
ns
107
-
nC
12
-
A
DocID027662 Rev 2
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