SCT10N120 Datasheet, PDF (1/14 Pages) STMicroelectronics – High voltage DC-DC converters

SCT10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ
(typ., TJ = 150 °C) in an HiP247™ package
Datasheet - production data
HiP247
3
2
1
Figure 1: Internal schematic diagram
Features
 Very tight variation of on-resistance vs.
temperature
 Slight variation of switching losses vs.
temperature
 Very high operating temperature capability
(T_J=200 °C)
 Very fast and robust intrinsic body diode
 Low capacitance
Applications
 Solar inverters, UPS
 Motor drives
 High voltage DC-DC converters
 Switch mode power supplies
D(2, TAB)
G(1)
S(3)
Order code
SCT10N120
AM01475v1_Tab
Description
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and
very good switching performance almost
independent of temperature. The outstanding
thermal properties of the SiC material, combined
with the device’s housing in the proprietary
HiP247™ package, allows designers to use an
industry-standard outline with significantly
improved thermal capability. These features
render the device perfectly suitable for high-
efficiency and high power density applications.
Table 1: Device summary
Marking
Package
Packaging
SCT10N120
HiP247™
Tube
The device meets ECOPACK standards, an environmentally-friendly grade of products
commonly referred to as “halogen-free”. See Section 6: "Package information".
May 2016
DocID027662 Rev 2
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
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