SCT10N120 Datasheet, PDF (4/14 Pages) STMicroelectronics – High voltage DC-DC converters

Electrical characteristics
SCT10N120
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified).
Table 4: On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA
1200
V
Zero gate voltage
IDSS
drain current
VDS = 1200 V, VGS = 0 V
VDS = 1200 V, VGS = 0 V,
TJ = 200 °C ⁽¹⁾
10 µA
100 µA
Gate-body leakage
IGSS
current
VDS = 0 V,
VGS = -10 to 22 V
100 nA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
1.8 3.5
V
VGS = 20 V, ID = 6 A
500 690 mΩ
Static drain-source
RDS(on) _{on-resistance}
VGS = 20 V, ID = 6 A,
TJ = 150 °C
VGS = 20 V, ID = 6 A,
TJ = 200 °C
520
mΩ
580
mΩ
Notes:
(1)_{Defined by design, not subject to production test.}
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
Table 5: Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 400 V, f = 1 MHz,
VGS = 0 V
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 800 V, ID = 6 A,
VGS = 0 to 20 V
Gate input resistance
f=1 MHz, ID=0 A
Min. Typ. Max. Unit
- 290
-
pF
-
30
-
pF
-
9
-
pF
-
22
-
nC
-
3
-
nC
-
10
-
nC
-
8
-
Ω
Symbol
Eon
Eoff
Eon
Eoff
Table 6: Switching energy (inductive load)
Parameter
Test conditions
Min.
Turn-on switching energy
Turn-off switching energy
Turn-on switching energy
Turn-off switching energy
VDD = 800 V, ID = 6 A
-
RG= 10 Ω,
VGS = -5 to 20 V
-
VDD = 800 V, ID = 6 A
-
RG= 10 Ω,
VGS = -5 to 20 V
-
TJ= 150 °C
Typ.
90
30
104
33
Max.
-
-
-
-
Unit
µJ
µJ
µJ
µJ
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