CD00269478 Datasheet, PDF (5/10 Pages) STMicroelectronics – Dual N-channel 450 V, 3.2 Ω, 0.5 A SuperMESH3 Power MOSFET in SO-8

STS1DN45K3
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 225 V, I_D = 0.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 4)
Min. Typ. Max Unit
TBD
ns
TBD
ns
-
-
TBD
ns
TBD
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t(s) ^{ISD Source-drain current}
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
uc ^VSD ^{(2) Forward on voltage}
I_SD = 0.5 A, V_GS = 0
-
d _trr
ro _Qrr
P _IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 0.5 A, di/dt = 100 A/µs _-
V_DD = 100 V (see Figure 7)
te _trr
le _Qrr
so ^IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 0.5 A, di/dt = 100 A/µs
V_DD = 100 V, T_j = 150 °C
-
(see Figure 7)
b _{1. Pulse width limited by safe operating area}
O _{2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
0.5 A
2A
1.6 V
TBD
ns
TBD
nC
TBD
A
TBD
ns
TBD
nC
TBD
A
ct(s) ^{- Table 8.}
u _Symbol
Gate-source Zener diode
Parameter
Test conditions
Prod ^BVGSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min. Typ. Max. Unit
30
V
te_{The built-in back-to-back Zener diodes have specifically been designed to enhance not only}
le_{the device’s ESD capability, but also to make them safely absorb possible voltage transients}
so ^{that may occasionally be applied from gate to source. In this respect the Zener voltage is}
b appropriate to achieve an efficient and cost-effective intervention to protect the device’s
O integrity. These integrated Zener diodes thus avoid the usage of external components
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