CD00269478 Datasheet, PDF (3/10 Pages) STMicroelectronics – Dual N-channel 450 V, 3.2 Ω, 0.5 A SuperMESH3 Power MOSFET in SO-8

STS1DN45K3
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V_DS Drain-source voltage (V_GS = 0)
450
V
V_GS Gate-source voltage
± 30
V
I_D Drain current (continuous) at T_C = 25 °C
0.5
A
I_D Drain current (continuous) at T_C = 100 °C
0.32
A
I_DM ⁽¹⁾
t(s) ^PTOT
uc _IAR
Prod ^EAS
te dv/dt ⁽²⁾
Drain current (pulsed)
Total dissipation at T_C = 25 °C (dual operation)
Total dissipation at T_C = 25 °C (single operation)
Avalanche current, repetitive or not-repetitive (pulse
width limited by T_j max)
Single pulse avalanche energy
(starting T_j = 25°C, I_D = I_AR, V_DD = 50 V)
Peak diode recovery voltage slope
le _{Tstg Storage temperature}
so _{Tj Max. operating junction temperature}
b _{1. Pulse width limited by safe operating area}
- ^O 2. I_SD ≤ 0.5 A, di/dt ≤ TBD A/µs, V_Peak < V_(BR)DSS
t(s) Table 3.
uc Symbol
Thermal data
Parameter
rod ^{Thermal resistance junction-amb max}
(single operation)
P Rthj-amb(1)
Thermal resistance junction-amb max
te _{(dual operation)}
Obsole^{1. When mounted on FR4 board (steady state)}
2
1.7
1.3
0.5
TBD
TBD
- 55 to 150
150
Value
62.5
78
A
W
W
A
mJ
V/ns
°C
°C
Unit
°C/W
°C/W
Doc ID 17338 Rev 1
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