CD00269478 Datasheet, PDF (1/10 Pages) STMicroelectronics – Dual N-channel 450 V, 3.2 Ω, 0.5 A SuperMESH3 Power MOSFET in SO-8

Features
STS1DN45K3
Dual N-channel 450 V, 3.2 Ω, 0.5 A SuperMESH3™
Power MOSFET in SO-8
Preliminary data
Type
V_DSS
R_DS(on)
max
I_D
P_w
STS1DN45K3 450 V < 3.8 Ω 0.5 A 1.7 W
t(s) ^{■ 100% avalanche tested}
c _{■ Low input capacitances and gate charge}
du _{■ Low gate input resistance}
Pro _Application
te _{■ Switching applications}
sole _Description
Ob SuperMESH3™ is a new Power MOSFET
- _{technology that is obtained via improvements}
) _{applied to STMicroelectronics’ SuperMESH™}
t(s ^{technology combined with a new optimized}
c vertical structure. The resulting product has an
u _{extremely low on resistance, superior dynamic}
d _{performance and high avalanche capability,}
ro _{making it especially suitable for the most}
Obsolete ^{P demanding applications.}
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STS1DN45K3
Marking
1ll45
Packages
SO-8
Packaging
Tape and reel
April 2010
Doc ID 17338 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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