CD00251512 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220

STD7N52DK3, STF7N52DK3, STP7N52DK3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 260 V, I_D = 3 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 19)
Min. Typ. Max Unit
12
ns
12
ns
-
-
37
ns
19
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 6 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 6 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 24)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 6 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 24)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
6A
-
24 A
-
1.5 V
110
ns
- 440
nC
8
A
140
ns
- 680
nC
10
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
BV_GSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min. Typ. Max. Unit
30
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 16387 Rev 2
5/16