CD00251512 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220

Electrical characteristics
STD7N52DK3, STF7N52DK3, STP7N52DK3
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = Max rating
drain current (V_GS = 0) V_DS = Max rating, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
Gate threshold voltage V_DS = V_GS, I_D = 50 µA
Static drain-source on
resistance
V_GS = 10 V, I_D = 3 A
Min. Typ. Max. Unit
525
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
0.95 1.15 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 50 V, f = 1 MHz,
V_GS = 0
870
pF
-
70
- pF
13
pF
C_o(tr)(1)
C_o(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
V_DS = 0 to 525 V, V_GS = 0
-
53
- pF
-
74
- pF
R_G
Intrinsic gate
resistance
f = 1 MHz open drain
-
3.5
-
Ω
Q_g Total gate charge
V_DD = 420 V, I_D = 6 A,
Q_gs Gate-source charge V_GS = 10 V
Q_gd Gate-drain charge
(see Figure 20)
33
nC
-
5
- nC
19
nC
1. C_{oss eq.} time related is defined as a constant equivalent capacitance giving the same charging time as C_oss
when V_DS increases from 0 to 80% V_DSS
2. C_{oss eq.} energy related is defined as a constant equivalent capacitance giving the same stored energy as
C_oss when V_DS increases from 0 to 80% V_DSS
4/16
Doc ID 16387 Rev 2