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CD00251512 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220
STD7N52DK3, STF7N52DK3, STP7N52DK3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25°C, ID = IAR, VDD = 50 V)
Gate source ESD(HBM-C = 100 pF,
VESD(G-S) R = 1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
di/dt Diode reverse recovery current slope
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 6 A, peak VDS < V(BR)DSS.
Value
TO-220 DPAK
525
± 30
6
4
24
90
TO-220FP
6 (1)
4 (1)
24 (1)
25
3
100
2500
20
400
2500
-55 to 150
150
Unit
V
V
A
A
A
W
A
mJ
V
V/ns
A/µs
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb (1) Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
TO-220 DPAK
1.39
50
62.5
TO-220FP
5
62.5
300
300
Unit
°C/W
°C/W
°C/W
°C
Doc ID 16387 Rev 2
3/16