ST10F273 Datasheet, PDF (43/179 Pages) STMicroelectronics – 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM

ST10F273
Internal Flash memory
5.7
Write operation summary
In general, each write operation is started through a sequence of 3 steps:
1. The first instruction is used to select the desired operation by setting its corresponding
selection bit in the Flash Control Register 0.
2. The second step is the definition of the Address and Data for programming or the
sectors or banks to erase, SMOD must be always set except for writing in Flash Non
Volatile Protection registers.
3. The last instruction is used to start the write operation, by setting the start bit WMS in
the FCR0.
Once selected, but not yet started, one operation can be canceled by resetting the operation
selection bit.
A summary of the available Flash Module Write Operations are shown in the following
Table 25.
Table 25. Flash write operations
Operation
Select bit
Word program (32-bit)
WPG
Double word program (64-bit)
Sector erase
Set protection
Program/Erase suspend
DWPG
SER
SPR
SUSP
Address and data
FARL/FARH
FDR0L/FDR0H
FARL/FARH
FDR0L/FDR0H
FDR1L/FDR1H
FCR1L/FCR1H
FDR0L/FDR0H
None
Start bit
WMS
WMS
WMS
WMS
None
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