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M69KB128AA Datasheet, PDF (41/68 Pages) STMicroelectronics – 128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
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M69KB128AA
9 DC and AC parameters
Table 16.
Symbol
DC Characteristics
Parameter
Refreshed
Array
Test Conditions
Min. Typ. Max. Unit
VOH(1) Output High Voltage
IOH = –0.2mA
0.8VCCQ
V
VOL(1) Output Low Voltage
IOL = 0.2mA
0.2VCCQ V
VIH(2) Input High Voltage
VCCQ–0.4
VCCQ + V
0.2
VIL(3) Input Low Voltage
–0.2
0.4
V
ILI Input Leakage Current
VIN = 0 to VCCQ
1
µA
ILO Output Leakage Current
G = VIH or E = VIH
1
µA
ICC1(4)
Asynchronous Read/Write
Random at tRC min
VIN = 0V or VCCQ,
IOUT = 0mA, E = VIL
70ns
85ns
25 mA
22 mA
ICC2(4) Asynchronous Page Read
VIN = 0V or VCCQ
IOUT = 0mA, E = VIL
70ns
85ns
15 mA
12 mA
ICC3(4)
Burst, Initial Read/Write
Access
VIN = 0V or VCCQ
IOUT = 0mA, E = VIL
104MHz
80MHz
66MHz
35 mA
30 mA
25 mA
ICC4R(4) Continuous Burst Read
VIN = 0V or VCCQ
IOUT = 0mA, E = VIL
104MHz
80MHz
66MHz
30 mA
25 mA
20 mA
ICC4W(4) Continuous Burst Write
VIN = 0V or VCCQ
IOUT = 0mA, E = VIL
104MHz
80MHz
66MHz
35 mA
30 mA
25 mA
Full Array
200 µA
IPASR(4)
Partial Array
Refresh Standby
Current
1/2 Array
1/4 Array
1/8 Array
VIN = 0V or VCCQ
E = VCCQ
170 µA
155 µA
150 µA
None
140 µA
ISB(5) Standby Current
VIN = 0V or VCCQ, E = VCCQ
200 µA
ICCPD Deep-Power Down Current
VIN = 0V or VCCQ,
VCC, VCCQ = 1.95V; TA= +85°C
3
10
µA
1. BCR5-BCR4 = 01 (default settings).
2. Input signals may overshoot to VCCQ+ 1.0V for periods of less than 2ns during transitions.
3. Output signals may undershoot to VSS – 1.0V for periods of less than 2ns during transitions.
4. This parameter is specified with all outputs disabled to avoid external loading effects. The user must add the current
required to drive output capacitance expected for the actual system.
5. ISB maximum value is measured at +85°C with PAR set to Full Array. In order to achieve low standby current, all inputs
must be driven either to VCCQ or VSSQ. ISB might be slightly higher for up to 500ms after Power-up, or when entering
Standby mode.
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