THBT7011D Datasheet, PDF (4/8 Pages) STMicroelectronics – DUAL OVERVOLTAGE PROTECTION FOR TELECOM LINE

THBT7011D
STATIC PARAMETERS BETWEEN TIP AND RING
Type
I_RM @ V_RM
max.
note 6
IR @ VR
max.
note 6
µA
V
µA
V
THBT7011D
5
132
50
140
Note 1:
Note 2:
Note 3:
Note 4:
Note 5 :
Note 6:
IR measured at VR guarantees VBR > VR
Measured at 50 Hz (1 cycle) test circuit 1.
See the reference test circuit 2.
VR = 1V, F = 1MHz.
See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card.
Ground not connected or |VTIP| = |VRING| versus Ground
C
max
note 4
pF
40
DYNAMIC BREAKOVER VOLTAGES (Transversal mode)
Type
THBT7011D
Symbol
VBO
Test conditions (see note 5)
10/700µs 1.5kV
1.2/50µs 1.5kV
2/10µs 2.5kV
Rp=10Ω
R_p=10Ω
Rp=62Ω
IPP=30A
I_PP=30A
IPP=38A
Maximum Unit
90
V
95
150
TEST CIRCUIT 1 for IBO and VBO parameters:
Auto
Transformer
220V/2A
tp = 20ms
R1
static
140
relay.
R2
240
Vout
K
IBO
measure
D.U.T
VBO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 200 Volt
- V_OUT = 250 V_RMS, R₁ = 140 Ω.
- Device with VBO ≥ 200 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.
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