THBT7011D Datasheet, PDF (3/8 Pages) STMicroelectronics – DUAL OVERVOLTAGE PROTECTION FOR TELECOM LINE

TEST CIRCUITS FOR IPP
Transversal mode
See test
circuit 3
TIP or
RING _IPP
GND
THBT7011D
THBT
R_P
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Parameter
Value
170
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_amb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
IRM Leakage current at stand-off voltage
V_R Continuous Reverse voltage
VBR Breakdown voltage
VBO Breakover voltage
I_H
Holding current
IBO Breakover current
IPP Peak pulse current
C
Capacitance
I
I_PP
IBO
I_H
I_R
V
V_RM V_R V_BRV_BO
STATIC PARAMETERS BETWEEN TIP AND GND, RING AND GND
Type
THBT7011D
I_RM @ V_RM
max.
µA
V
5
66
IR @ VR
max.
note 1
µA
V
50
70
V_BO @ I_BO
max. min.
note 2
max.
V
mA
mA
89
50
400
I_H
min
note 3
mA
150
C
max
note 4
pF
80
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