T635T-8FP Datasheet, PDF (4/9 Pages) STMicroelectronics – Medium current Triac

Characteristics
T635T-8FP
Figure 5. On-state characteristics (maximum
values)
100 ^ITM(A)
T_j max :
V_to = 0.85 V
10
R_d = 75 mW
T_j = 150 °C
T_j = 25 °C
V_TM(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 6. Surge peak on-state current versus
number of cycles
50 ^ITSM(A)
45
40
35
30
25
20
15
10 Repetitive
5 ^{TC= 117 °C}
0
1
Non repetitive
T_j initial=25 °C
t = 20 ms
One cycle
Number of cycles
10
100
1000
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I²t
1000 ^{ITSM(A), I²t (A²s)}
dI/dt limitation: 100 A/µs
100
T_j initial=25 °C
I_TSM
Figure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
2.0 ^{IGT[Tj] / IGT[Tj = 25 °C], VGT[Tj] / VGT[Tj = 25 °C]}
IGT Q1-Q2
1.5
IGT Q3
VGT
1.0
Sinusoidal pulse with
10 ^{width tp<10 ms}
0.01
0.10
I²t
t_p(ms)
1.00
0.5
T_j(°C)
0.0
10.00
-50
-25
0
25
50
75
100
125
150
Figure 9. Relative variation of static dV/dt Figure 10. Relative variation of holding current
immunity versus junction temperature (typical
and latching current versus junction
values)
temperature (typical values)
5 ^{dV/dt [Tj] / dV/dt [Tj=150 °C]}
(dV/dt) > 5KV/µs
4
3
2
V_D=V_R=402V
2.0 ^{IH, IL[Tj] / IH, IL[Tj = 25 °C]}
1.5
I_L
I_H
1.0
0.5
1
Tj(°C)
T_j(°C)
0
0.0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
4/9
DocID024247 Rev 2