T635T-8FP Datasheet, PDF (2/9 Pages) STMicroelectronics – Medium current Triac

Characteristics
1
Characteristics
T635T-8FP
Table 2. Absolute maximum ratings (T_j = 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
I_T(rms)
I_TSM
I^²t
V_DRM,
V_RRM
V_DSM,
V_RSM
dI/dt
I_GM
P_G(AV)
T_stg
T_j
T_L
V_ins
On-state rms current (full sine wave)
T_c = 117 °C
6
A
Non repetitive surge peak on-state ^{F = 50 Hz t = 20 ms}
45
current (full cycle, T_j initial = 25 °C) _{F = 60 Hz t = 16.7 ms}
47
A
I^²t value for fusing, T_j initial = 25 °C
t_p = 10 ms
13
A^²s
Repetitive surge peak off-state voltage
T_j = 150 °C
600
V
T_j = 125 °C
800
Non repetitive surge peak off-state voltage
t_p = 10 ms
900
V
Critical rate of rise of on-state
current I_G = 2 x I_GT, t_r ≤ 100 ns
F = 100 Hz
Peak gate current
t_p = 20 µs T_j = 150 °C
Average gate power dissipation
T_j = 150 °C
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
Insulation rms voltage, 1 minute
100
4
1
- 40 to + 150
- 40 to + 150
260
2
A/µs
A
W
°C
°C
kV
Table 3. Electrical characteristics (T_j = 25 °C, unless otherwise stated)
Symbol
Test conditions
Quadrant
Value
Unit
I_GT ⁽¹⁾ V_D = 12 V, R_L = 30 Ω
V_GT
V_GD
I_H ⁽¹⁾
V_D = 12 V, R_L = 30 Ω
V_D = V_DRM, R_L = 3.3 kΩ, T_j = 150 °C
I_T = 500 mA
I_L
I_G = 1.2 I_GT
dV/dt ⁽¹⁾
V_D = 536 V, gate open
V_D = 402 V, gate open
(dI/dt)c ⁽¹⁾ Without snubber (dV/dt)c ≥ 20 V/µs)
1. For both polarities of A2 referenced to A1
I - II - III
Min.
Max.
I - II - III
Max.
I - II - III
Min.
Max.
I - III
Max.
II
Max.
T_j = 125 °C
Min.
T_j = 150 °C
T_j = 125 °C
Min.
T_j = 150 °C
1.75
35
1.3
0.2
40
60
65
2000
1000
6
3
mA
V
V
mA
mA
mA
V/µs
V/µs
A/ms
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DocID024247 Rev 2