T635T-8FP Datasheet, PDF (3/9 Pages) STMicroelectronics – Medium current Triac

T635T-8FP
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
V_T ⁽¹⁾
V_t0 ⁽¹⁾
R_d ⁽¹⁾
I_TM = 8.5 A, t_p = 380 µs
Threshold voltage
Dynamic resistance
I_DRM
I_RRM
V_DRM = V_RRM = 800 V
V_DRM = V_RRM = 600 V
1. For both polarities of A2 referenced to A1
T_j = 25 °C
T_j = 150 °C
T_j = 150 °C
T_j = 25 °C
T_j = 125 °C
T_j = 150 °C
Symbol
R_th(j-c)
R_th(j-a)
Junction to case (AC)
Junction to ambient
Table 5. Thermal resistance
Parameter
Max.
Max.
Max.
Max.
Max.
Value
Unit
1.55
V
0.85
V
75
mΩ
5
µA
0.6
mA
2.0
Value
4.5
60
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
8 ^P(W)
α =180
6
4
2
180°
I_T(RMS)(A)
0
0
1
2
3
4
5
6
Figure 2. On-state rms current versus case
temperature (full cycle)
7 ^IT(RMS)(A)
6
α =180°
5
4
3
2
1
T_C(°C)
0
0
25
50
75
100
125
150
Figure 3. On-state rms current versus ambient
temperature (free air convection)
3.0 ^IT(RMS)(A)
2.5
α = 180°
2.0
Figure 4. Relative variation of thermal
impedance versus pulse duration
1.0E+00 ^{K = [Zth / Rth]}
Z_th(j-c)
Z_th(j-a)
1.5
1.0E-01
1.0
0.5
0.0
0
T_a(°C)
tp (s)
1.0E-02
25
50
75
100
125
150
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
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