STD6NM60N Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET

Electrical characteristics
STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
dv/dt^{(1) Drain-source voltage slope}
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1mA, V_GS= 0
V_DD= 400V, V_GS = 10V,
I_D = 4.6A
V_DS = Max rating,
V_DS = Max rating @125°C
V_GS = ±20V
V_DS= V_GS, I_D = 250µA
V_GS= 10V, I_D= 2.3A
1. Characteristics value at turn off on inductive load
Min Typ Max Unit
600
V
40
V/ns
1 µA
100 µA
±100 nA
2
3
4
V
0.85 0.92 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{=15V, I}_D ^{= 2.3A}
4
S
C_iss Input capacitance
420
pF
C_oss ^{Output capacitance}
V_DS =50V, f=1 MHz, V_GS=0
30
pF
C_rss
Reverse transfer
capacitance
4
pF
C_{oss eq. Output equivalent}
(2) _capacitance
V_GS =0V, V_DS =0V to 480V
70
pF
f=1MHz Gate DC Bias=0
Rg Gate input resistance
test signal level=20mV
6
Ω
open drain
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=480V, I_D = 4.6A
V_GS =10V
(see Figure 18)
13
nC
2
nC
7
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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