STD6NM60N Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET

STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
TO-220
DPAK/IPAK
TO-220FP
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
Drain current (continuous) at T_C = 100°C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;T_C=25°C)
T_j
Operating junction temperature
T_stg
Storage temperature
1. Limited by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤4.6A, di/dt ≤400A/µs, V_DD = 80% V_(BR)DSS
600
± 25
4.6
4.6 ⁽¹⁾
2.9
2.9 ⁽¹⁾
18.4
18.4 ⁽¹⁾
45
20
15
--
2500
-55 to 150
Unit
V
V
A
A
A
W
V/ns
V
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering
purpose
Value
TO-220
DPAK/IPAK
TO-220FP
2.78
6.25
62.5
Unit
°C/W
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, I_D=I_AS, V_DD= 50V)
Value
Unit
2
A
65
mJ
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