STD6NM60N Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET

STD6NM60N - STD6NM60N-1
STF6NM60N - STP6NM60N
N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK
Second generation MDmesh™ Power MOSFET
Features
Type
V_DSS
(@Tjmax)
R_DS(on)
I_D
STD6NM60N
STD6NM60N-1
STF6NM60N
STP6NM60N
650V
650V
650V
650V
<0.92Ω
<0.92Ω
<0.92Ω
<0.92Ω
4.6A
4.6A
4.6A ⁽¹⁾
4.6A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This device is realized with the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters
Application
■ Switching applications
3
2
1
TO-220
3
1
DPAK
3
2
1
TO-220FP
3
2
1
IPAK
Internal schematic diagram
Order codes
Part number
STD6NM60N-1
STD6NM60N
STF6NM60N
STP6NM60N
Marking
D6NM60N
D6NM60N
F6NM60N
P6NM60N
Package
IPAK
DPAK
TO-220FP
TO-220
Packaging
Tube
Tape & reel
Tube
Tube
June 2007
Rev 2
1/17
www.st.com
17