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| STD6N52K3 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STD6N52K3 - STF6N52K3
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 30 V
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on
resistance
VGS = 10 V, ID = 2.5 A
Min. Typ. Max. Unit
525
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
1.0 1.2 â¦
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15 V, ID = 2.5 A
TBD
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
TBD
TBD
TBD
pF
pF
pF
COSS
(1)
eq
Equivalent output
capacitance
VGS = 0, VDS = 0 to 240 V
TBD
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
TBD
â¦
Qg
Total gate charge
VDD = 240 V, ID = 5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 3)
TBD
nC
TBD
nC
TBD
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 150 V, ID = 3.15 A,
RG = 4.7 â¦, VGS = 10 V
(see Figure 2)
Min.
Typ.
TBD
TBD
TBD
TBD
Max Unit
ns
ns
ns
ns
4/12
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