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STD6N52K3 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET
Features
STD6N52K3
STF6N52K3
N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP
SuperMESH3™ Power MOSFET
Preliminary Data
Type
VDSS
RDS(on)
max
ID
STD6N52K3
STF6N52K3
525 V
525 V
< 1.2 Ω 5 A
< 1.2 Ω 5 A(1)
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Pw
70 W
25 W
Application
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
3
2
1
TO-220FP
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD6N52K3
STF6N52K3
Marking
6N52K3
6N52K3
Package
DPAK
TO-220FP
Packaging
Tape and reel
Tube
September 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
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