STD6N52K3 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET

STD6N52K3 - STF6N52K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
dv/dt ⁽³⁾
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 6.3 A, di/dt = TBD, V_DD = 80% V_(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering
purpose
Table 4. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50V)}
Value
DPAK
TO-220FP
525
± 30
5
3.15
20
70
0.56
9
5 ⁽¹⁾
3.15⁽¹⁾
20 ⁽¹⁾
25
0.2
Unit
V
V
A
A
A
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
150
°C
DPAK
1.79
50
--
TO-220FP
5
--
62.5
Unit
°C/W
°C/W
°C/W
300
°C
Max value
Unit
TBD
A
TBD
mJ
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