STD30PF03LT4 Datasheet, PDF (4/13 Pages) STMicroelectronics – P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK STripFET™ II Power MOSFET

Electrical characteristics
STD30PF03LT4 - STD30PF03L-1
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD=25 V, I_D=24 A,
R_G=4.7 Ω, V_GS=5 V
Figure 14
Min Typ Max Unit
64
ns
122
ns
36
ns
26
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 12 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=24 A, di/dt =100 A/µs,
V_DD=50 V, Tj=150 °C
Figure 16
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min Typ Max Unit
24 A
96 A
1.3 V
40
ns
52
µC
2.6
A
Note:
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
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