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| STD30PF03LT4 Datasheet, PDF (3/13 Pages) STMicroelectronics – P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK STripFET™ II Power MOSFET | |||
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STD30PF03LT4 - STD30PF03L-1
2
Electrical characteristics
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
ID = 250 µA, VGS= 0
VDS=Max rating
VDS=Max rating,Tc=100 °C
VGS = ±16 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 12 A
VGS= 5 V, ID= 12 A
30
V
1 µA
10 µA
±100 nA
1
V
0.025 0.028 â¦
0.032 0.040 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15 V, ID= 12 A
VDS =25 V, f=1MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=15 V, ID = 24 A
VGS =5 V
Figure 15
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
23
S
1670
pF
345
pF
120
pF
18.6 28 nC
5.5
nC
11
nC
Note:
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
3/13
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