STD30PF03LT4 Datasheet, PDF (2/13 Pages) STMicroelectronics – P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK STripFET™ II Power MOSFET

Electrical ratings
1
Electrical ratings
STD30PF03LT4 - STD30PF03L-1
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D ⁽¹⁾
Drain current (continuous) at T_C = 25 °C
I_D ^{(1) Drain current (continuous) at T}_C ^{= 100 °C}
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C=25 °C
Derating factor
E_AS ⁽³⁾ Single pulse avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting T_J = 25 °C, I_D = 12 A, V_DD =15 V
Value
30
± 16
24
24
96
70
0.47
850
-55 to 175
175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
R_thj-pcb Thermal resistance junction-pcb max
T_l
Maximum lead temperature for soldering purpose
1. When mounted on FR- 4board of 1 inch².
Max value
DPAK
IPAK
2.14
--
100
50⁽¹⁾
--
--
275
Unit
°C/W
°C/W
°C/W
°C/W
Note:
2/13
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed