STD140N6F7 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 60 V, 3.1 m(ohm) typ., 80 A STripFET F7 Power MOSFET in a DPAK package

Electrical characteristics
STD140N6F7
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: On/off-states
Symbol
Parameter
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 60 V
VDS = 0 V, VGS = 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
Min. Typ. Max. Unit
60
V
1 µA
100 nA
2
4
V
3.1 3.8 mΩ
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = 30 V, f = 1 MHz,
VGS = 0 V
VDD = 30 V, ID = 80 A,
VGS = 10 V
(see Figure 14: "Test circuit
for gate charge behavior")
Min. Typ. Max. Unit
- 3100 -
- 1520 -
pF
- 193 -
-
55
-
-
19
-
nC
-
18
-
Symbol
Parameter
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = 30 V, ID = 40 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 13: "Test circuit
for resistive load switching times" )
Min. Typ.
- 24
- 68
- 39
- 20
Max. Unit
-
-
ns
-
-
Symbol
VSD⁽¹⁾
trr
Qrr
IRRM
Table 7: Source-drain diode
Parameter
Test conditions
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 80 A
ISD = 80 A, di/dt = 100 A/µs,
VDD = 48 V
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
Notes:
(1) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
Min. Typ. Max. Unit
-
1.2 V
- 42.4
ns
- 36.2
nC
- 1.8
A
4/13
DocID028801 Rev 2