STD140N6F7 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 60 V, 3.1 m(ohm) typ., 80 A STripFET F7 Power MOSFET in a DPAK package

STD140N6F7
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID⁽¹⁾
IDM⁽²⁾
PTOT
EAS⁽³⁾
dV/dt⁽⁴⁾
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Single pulse avalanche energy
Drain-body diode dynamic dV/dt ruggedness
Storage temperature range
Operating junction temperature range
Notes:
(1) _{Current is limited by package.}
(2) _{Pulse width is limited by safe operating area.}
(3) _{starting Tj = 25 °C, ID = 20 A, VDD = 30 V.}
(4)_{ISD= 80 A; di/dt = 600 A/μs; VDD = 48 V; Tj < Tjmax}
Symbol
Rthj-pcb⁽¹⁾
Rthj-c
Table 3: Thermal data
Parameter
Thermal resistance junction-pcb
Thermal resistance junction-case
Notes:
(1)_{When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec}
Electrical ratings
Value
60
±20
80
80
320
134
200
7.1
-55 to 175
Unit
V
V
A
A
W
mJ
V/ns
°C
Value
50
1.12
Unit
°C/W
DocID028801 Rev 2
3/13