STD140N6F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 60 V, 3.1 m(ohm) typ., 80 A STripFET F7 Power MOSFET in a DPAK package

STD140N6F7
N-channel 60 V, 3.1 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD140N6F7
VDS
60 V
RDS(on) max.
3.8 mΩ
ID
80 A
PTOT
134 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
AM01475v1_Tab
Order code
STD140N6F7
Table 1: Device summary
Marking
Package
140N6F7
DPAK
Packing
Tape and reel
April 2016
DocID028801 Rev 2
This is information on a product in full production.
1/13
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