STD100N03L-1 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET

2 Electrical characteristics
STD100N03L - STD100N03L-1
Table 7. Source-Drain Diode
Symbol
Parameter
Test Conditions
I_SD
Source-Drain Current
I_SDMNote 2 Source-Drain Current (pulsed)
V_SD Note 4 Forward On Voltage
I_SD = 40 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 80 A, di/dt = 100 A/µs
V_DD = 25 V, T_j = 150 °C
(see Figure 16)
Min.
Typ.
40
40
2
Max. Unit
80
A
320
A
1.3
V
ns
nC
A
(1) Current limited by package.
(2) Pulse width limited by safe operating area
(3) I_SD≤ 80A, di/dt ≤ 360 A/µs, V_DS≤ V_(BR)DSS, Tj ≤ Tj_MAX
(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
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