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STD100N03L-1 Datasheet, PDF (2/14 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET
1 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-Source Voltage (VGS = 0)
VGS
Gate-Source Voltage
ID Note 1 Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt Note 3 Peak Diode Recovery Voltage Slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Table 2. Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl
Maximum Lead Temperature For Soldering
Purpose (for 10sec. 1.6 mm from case)
Table 3. Avalanche characteristics
Symbol
Parameter
IAV
Not-Repetitive Avalanche Current
(pulse width limited by Tj max)
Single pulsed avalanche Energy
EAS
(starting Tj=25°C, ID=IAV, VDD = 24V
STD100N03L - STD100N03L-1
Value
30
± 20
80
70
320
110
0.73
3.9
-55 to 175
1.36
100
275
Value
40
500
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
°C/W
°C/W
°C
Unit
A
mJ
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