STD100N03L-1 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET

STD100N03L - STD100N03L-1
2 Electrical characteristics
2 Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 4. On/Off states
Symbol
Parameter
V_(BR)DSS
Drain-Source Breakdown
Voltage
I_DSS
Zero Gate Voltage Drain
Current (V_GS = 0)
I_GSS
V_GS(th)
Gate Body Leakage Current
(V_DS = 0)
Gate Threshold Voltage
R_DS(on)
Static Drain-Source On
Resistance
R_DS(on)
Static Drain-Source On
Resistance
Test Conditions
Min.
I_D = 250µA, V_GS= 0
30
V_DS = Max Rating,
V_DS = Max Rating, T_c=125°C
V_DS = ± 20 V
V_DS= V_GS, I_D = 250 µA
1
V_GS= 10 V, I_D= 40 A
V_GS= 5 V, I_D= 20 A
V_GS= 10 V, I_D= 40 A @125°C
V_GS= 5 V, I_D= 20 A @125°C
Typ. Max.
10
100
±200
0.0045 0.0055
0.008 0.01
0.0068
0.0146
Unit
V
µA
µA
nA
V
Ω
Ω
Ω
Ω
Table 5. Dynamic
Symbol
Parameter
Test Conditions
g_fs Note 4
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_G
Forward Transconductance V_DS = 10 V_, I_D= 15 A
Input Capacitance
Output Capacitance
V_DS = 25V, f = 1 MHz, V_GS =0
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Input Resistance
V_DD = 24 V, I_D = 80 A,
V_GS = 5V
(see Figure 15)
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Min.
Typ. Max. Unit
31
S
2060
pF
728
pF
67
pF
20
27
nC
7
nC
7.5
nC
1.9
Ω
Table 6. Switching time
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V, I_D = 40 A
R_G= 4.7 Ω, V_GS= 10V,
(see Figure 14)
V_DD = 15 V, I_D = 40 A
R_G= 4.7 Ω, V_GS= 10V,
(see Figure 14)
Min.
Typ. Max. Unit
9
ns
205
ns
31
ns
35
ns
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